In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely
grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the …

In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low
turn-on voltage V ON (0.37 V) were demonstrated. Due to the process of O 2 plasma …

In this article, we carry out the parameter shift of quasi-vertical GaN-on-Si Schottky barrier
diodes (SBDs) under ON-state stress with a high forward current of 2–4 kA/cm2. Turn-on …

In this study, metal–silicide-based contacts to GaN-cap/AlGaN/AlN-spacer/GaN-on-Si
heterostructure were investigated. Planar Schottky diodes with Cu-covered anodes …

In this paper, we address the problem of false turn-on effects in a half-bridge GaN power
converter in terms of circuit and device parameters. The model shows that the inherent false …

On-state stress induced device degradation of gallium nitride quasivertical Schottky barrier
diode (SBD) with SiO2 passivation layer was investigated in this article. The devices were …

Through this work, we report a shift in the turn-on voltage of recessed AlGaN/GaN Schottky
barrier diodes (SBDs) upon subjecting the device to reverse bias constant voltage stress. A …

The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET)
under on-state stress conditions is studied for a 650 V GaN-on-Si technology. Reliability …

In this paper, we report on demonstrating a high performance quasi-vertical GaN Schottky
barrier diode. With Mo-anode and post anode annealing, the developed SBD with nearly …

In this research work, a graded‐channel AlGaN/GaN high‐electron‐mobility transistor
(HEMT) featuring a cliff AlGaN barrier with a gate length of 60 nm is investigated. The …