Halide perovskite solar cells have achieved a certified efficiency of 25.2%, surpassing CdTe
and CuInGaSe2, which have long been regarded as the most‐efficient thin‐film photovoltaic …

Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …

We use an electron beam to induce and directly observe dislocation glide in strained GaAs
thin films on silicon substrates at room temperature using electron channeling contrast …

Minority carrier diffusion lengths and lifetimes were determined for p-type Ga (1-x) In x As
with an In-content of 0≤ x≤ 0.53 by cathodoluminescence and time-resolved …

The integration of near-field scanning optical microscopy (NSOM) with the imaging and
localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers …

The mobility of electrons in double heterostructures of p-type Ga 0.50 In 0.50 P has been
determined by measuring minority carrier diffusion length and lifetime. The minority electron …

Room temperature electronic diffusion is studied in 3 μ m thick epitaxial p+ GaAs lift-off films
using a novel circularly polarized photoluminescence microscope. The method is equivalent …

An all-optical technique has been used to provide the first direct measurement of anisotropic
minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier …

Minority carrier diffusion lengths (L d) are measured for GaN, GaN/AlGaN, and GaN/InGaN
core-shell nanowires using a technique based on imaging of recombination luminescence …

We determined the carrier diffusion lengths in nanoporous layers of dye-sensitized solar
cells by using scanning photocurrent microscopy. The diffusion lengths were found to be 60 …