Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …

The electronic structure of ε-Ga 2 O 3 thin films has been investigated by ab initio
calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the …

We consider the stress–strain state in α-Ga 2 O 3/α-Al 2 O 3 heterostructures, in which both
constituting phases belong to trigonal crystal system. We utilize the hexagonal geometry …

We propose a technuque of liquid-phase growth of (AlxGa1-x) 2O3 crystals with variable
and controlled Al content in them. When using the Czochralski growth process Ga2O3 melt …

Gallium oxide possesses material properties that are advantageous for power electronic
devices. Combined with the availability of native Ga 2 O 3 substrates, Ga 2 O 3-based …

In this work, we report on the results of structural characterization of α-and β-Ga2O3 layers
grown on various substrates: Al2O3, AlN/Al2O3 and AlN by halide vapor phase epitaxy …

Ultra-wide bandgap (UWBG) semiconductors have such distinctive advantages as
thermodynamic stability and high breakdown voltage. Due to these properties, such …

Gallium oxide is considered as a perspective functional material for a wide range of
applications. This includes light emitting devices, high power electronics, gas sensors and …

The article is devoted to advanced high voltage, high temperature and hyperfast GaAs SBD,
GaAs HJSBD structures with extreme high electrical and physical characteristics (V RRM …

β-Ga 2 O 3 thin films were obtained by the sol-gel method on sapphire and quartz
substrates, as well as on Cu-O buffer layers. It was shown that the sol-gel method allowed to …