The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
[HTML][HTML] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
H Miyake, CH Lin, K Tokoro, K Hiramatsu - Journal of Crystal Growth, 2016 - Elsevier
The annealing of sputtered AlN films with different thicknesses grown on sapphire in
nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were …
nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were …
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
Perspectives on UVC LED: Its progress and application
TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
[HTML][HTML] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …