The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …

Growth of ZnSnN2 films on (0001) Al2O3 substrates is performed by plasma-assisted
molecular-beam epitaxy by changing the growth temperatures from 350 to 650° C. Single …

In this article, we demonstrate the van der Waals (vdW) epitaxial growth of ZnO layers on
mica substrates through a low-temperature hydrothermal process. The thermal pretreatment …

The surface relaxation, cleavage energies and surface energies, surface grand potential
and surface electronic structure of eight different terminations of MgAl 2 O 4 (1 1 1) surfaces …

A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-
dimensional spinel structure in a low-temperature solution process was introduced, and it's …

Epitaxial zinc oxide layers were grown by plasma-enhanced molecular beam epitaxy (P-
MBE) on Al2O3 substrates. The zinc oxide films grown on c-plane (00.1) Al2O3 showed the …

Zinc oxide layers have been grown by magnetron sputtering in an oxygen atmosphere on
structured sapphire surfaces. The formation of ZnO islands oriented in two directions (the so …

The ZnO films were deposited on c-plane sapphire, Si (001) and MgAl2O4 (111) substrates
in pure Ar ambient at different substrate temperatures ranging from 400 to 750° C by radio …

The quality of the ZnO films, epitaxially grown on sapphire, can be substantially improved
when a MgO buffer layer is used. The role and the structural characteristics of this buffer …