BACKGROUND Semiconductor materials feature optical and electronic properties that can
be engineered through their composition and crystal structure. The use of semiconductors …

This paper presents recent progress in the field of semiconductor lasers and optical
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light
emitters in the fields of nanophotonics, nano-optics and nanobiotechnology,. Although there …

A critical assessment of thermal models for laser sputtering at high fluences is presented. It
is argued that the model explaining such sputtering by involving a subsurface superheating …

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for
achieving monolithically integrated Si photonics light source. Nowadays, laser structures …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

Heterogeneous integration of III–V semiconductor photonics combined with silicon foundry
technology enables low-cost, high-performance photonic integrated circuits. Highly reliable …

Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing
functionalities, offering an attractive approach to miniaturizing photonics in a compact area …

The device characteristics of semiconductor lasers have been improved with progress in
active layer structures. Carrier confinement dimension plays an important role especially in …

In the past few decades, numerous high-performance silicon (Si) photonic devices have
been demonstrated. Si, as a photonic platform, has received renewed interest in recent …