This work uses simulations to predict the performance of InAlAsSb solar cells for use as the
top cell of triple junction cells lattice matched to InP. The InP-based material system has the …

The carrier collection efficiency (CCE) is proposed as an effective parameter for indicating
the efficiency of carrier transport in quantum nanostructured solar cells. The CCE can be …

In this paper, a detailed analysis on the radiation response of solar cells with multi quantum
wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is …

2015-02-25 Assigned to MICROLINK DEVICES, INC. reassignment MICROLINK DEVICES,
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The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple
junction solar cells (TJSCs) has shown the existence of In-and Sb-rich regions in the …

Quaternary alloys are essential for the development of high-performance optoelectronic
devices. However, immiscibility of the constituent elements can make these materials …

In this work, we use an analytical drift-diffusion model, coupled with detailed carrier transport
and minority carrier lifetime estimates, to make realistic predictions of the conversion …

In this paper, we present temperature‐dependent current–voltage measurements of tunnel
junctions lattice matched to InP at temperatures ranging from room temperature to 220° C …

The growth of InAlAsSb by metal-organic vapor phase epitaxy has been demonstrated, with
a controllable antimony fraction exceeding 6%. Calculations have shown that InAlAsSb with …

Photodiodes made of III-V materials are ubiquitous with applications for telecommunications,
photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a …