This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

It is worldwide accepted that a real breakthrough in the Power Electronics field mainly
comes from the development and use of Wide Band Gap (WBG) semiconductor devices …

Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …

A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with
an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been …

It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide
Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and …

Sažetak It is worldwide accepted today that a real breakthrough in the Power Electronics
field may mainly come from the development and use of Wide Band Gap (WBG) …

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a
huge potential range of complementary magnetic and electronic properties, such as …

During the past two decades, medium-power inverters for electric and hybrid electric
vehicles (EV/HEV) have been dominated by mature silicon (Si) insulated-gate bipolar …

Silicon carbide (SiC) is the material of choice for modern power semiconductor applications,
having a superior reverse breakdown voltage and a low specific on resistance when …

This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind
Power and Solid-State Transformer applications. SiC diodes with voltage ranges between …