Highly efficient on-chip direct electronic–plasmonic transducers
Photonic elements can carry information with a capacity exceeding 1,000 times that of
electronic components, but, due to the optical diffraction limit, these elements are large and …
electronic components, but, due to the optical diffraction limit, these elements are large and …
Oxide-confined VCSELs for high-speed optical interconnects
M Feng, CH Wu, N Holonyak - IEEE Journal of Quantum …, 2018 - ieeexplore.ieee.org
The electrically pumped vertical-cavity surface-emitting laser (VCSEL) was first
demonstrated with metal cavities by Iga (1979); however, the device threshold current was …
demonstrated with metal cavities by Iga (1979); however, the device threshold current was …
Resonance-free frequency response of a semiconductor laser
We show experimentally and analytically that fast spontaneous recombination lifetime, τ B,
spon, leads to resonance-free frequency response in semiconductor lasers, and as a …
spon, leads to resonance-free frequency response in semiconductor lasers, and as a …
The transistor laser: Theory and experiment
HW Then, M Feng, N Holonyak - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
The quantum-well (QW) heterojunction bipolar transistor (HBT) laser the transistor laser (TL),
inherently a fast switching device, operates by transporting small minority base charge …
inherently a fast switching device, operates by transporting small minority base charge …
Electrically driven highly tunable cavity plasmons
Electrically driven ultrafast plasmon sources with narrow line width and wide-range
wavelength tunability are desirable choices for integrated nanophotonic circuits. These have …
wavelength tunability are desirable choices for integrated nanophotonic circuits. These have …
Analytical modeling of current gain in multiple-quantum-well heterojunction bipolar light-emitting transistors
M Kumar, LC Hsueh, SW Cheng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We have developed an analytical model to determine the current gain of heterojunction
bipolar light-emitting transistors (HBLETs) with multiple-quantum-wells (MQWs) inserted into …
bipolar light-emitting transistors (HBLETs) with multiple-quantum-wells (MQWs) inserted into …
Electro-optical logics by three-terminal quantum-well-light-emitting transistors integration
HT Cheng, YT Liang, YT Huang, SJ Hsu, WH Lin… - Photonics …, 2024 - opg.optica.org
The three-terminal quantum-well-light-emitting transistors (QW-LETs) possess appealing
characteristics, including multipath bidirectional electrical and optical inputs/outputs …
characteristics, including multipath bidirectional electrical and optical inputs/outputs …
Microwave circuit model of the three-port transistor laser
HW Then, M Feng, N Holonyak - Journal of Applied Physics, 2010 - pubs.aip.org
Based on an earlier charge control analysis, we have constructed a microwave circuit model
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …
Directional launching of surface plasmon polaritons by electrically driven aperiodic groove array reflectors
Access to surface plasmon polaritons (SPPs) with directional control excited by electrical
means is important for applications in (on-chip) nano-optoelectronic devices and to …
means is important for applications in (on-chip) nano-optoelectronic devices and to …
In operando characterization and control over intermittent light emission from molecular tunnel junctions via molecular backbone rigidity
In principle, excitation of surface plasmons by molecular tunnel junctions can be controlled
at the molecular level. Stable electrical excitation sources of surface plasmons are therefore …
at the molecular level. Stable electrical excitation sources of surface plasmons are therefore …