A review of advances in pixel detectors for experiments with high rate and radiation
M Garcia-Sciveres, N Wermes - Reports on Progress in Physics, 2018 - iopscience.iop.org
The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid
pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and …
pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and …
Silicon strip and pixel detectors for particle physics experiments
S Seidel - Physics Reports, 2019 - Elsevier
Following a brief introduction to the roles that a tracking detector fulfills in a particle physics
experiment, the concept of a silicon tracking detector is introduced. The contributors to …
experiment, the concept of a silicon tracking detector is introduced. The contributors to …
TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
S Bonaldo, T Ma, S Mattiazzo, A Baschirotto… - Nuclear Instruments and …, 2022 - Elsevier
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
S Bonaldo, DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
Influence of halo implantations on the total ionizing dose response of 28-nm pMOSFETs irradiated to ultrahigh doses
In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS
technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs …
technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses
S Bonaldo, S Gerardin, X Jin… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses
and then annealed at high temperature under different bias conditions. The experimental …
and then annealed at high temperature under different bias conditions. The experimental …
Radiation-induced charge trapping in shallow trench isolations of FinFETs
We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …