This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

The retention model of a bipolar ReRAM considering the percolative paths in a conductive
filament is proposed. We demonstrate, for the first time, that the control of oxygen vacancy …

In this paper, we explore various aspects of memristor modeling and use them to propose
improved access operations and design of a memristor-based memory. We study the current …

Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or
memory device that is indicative of the reliability and stochastic variability in its performance …

The proposed constant voltage forming (CVF) is shown to increase the resistances of the
low resistance and high resistance states while reducing their variability. By forcing the …

In this paper, we thoroughly investigate the characteristics of the TiN/Ti/HfO 2/TiN resistive
random access memory (RRAM) device. The physical mechanisms involved in the device …

Deep neural networks (DNNs), as a subset of machine learning (ML) techniques, entail that
real-world data can be learned, and decisions can be made in real time. However, their wide …

Point defects such as oxygen vacancies cause emergent phenomena such as resistive
switching in transition-metal oxides, but their influence on the electron-transport properties is …

Detailed operational and intrinsic switching characteristics for hafnia-based resistive random
access memory (RRAM) are presented, including materials/vacancy engineering …

Combining gas sensing and resistive switching within a single device allows for its utilization
as a gas sensor with built-in memory, capable of remembering a temporal change of the …