In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire
substrates by metal–organic vapour phase epitaxy is developed. This approach, based on in …

(73) Assignees: Lumileds Lighting US, LLC, San WO WO 2004/034025 A2 4/2004 Jose, CA
(US); Agilent Technologies, WO WO 2004/038767 A2 5/2004 Inc., Palo Alto, CA (US) …

The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique
advantages compared to their planar counterparts, introducing a promising path towards …

Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned
SiO x/GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous …

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-
V material, by a vapor-phase growth technique where the growth process eliminates the …

With the increasing attention dedicated to GaN nanowires for the realization of advanced
optoelectronic devices, important efforts have been devoted to the nanowire growth …

Three-dimensional GaN columns recently have attracted a lot of attention as the potential
basis for core-shell light emitting diodes for future solid state lighting. In this study, the …