This article reviews the progress made in the studies of copper in silicon over the last
several years and puts forward a comprehensive model of the behavior of copper in silicon …

Bright and efficient blue emission is key to further development of metal halide perovskite
light-emitting diodes. Although modifying bromide/chloride composition is straightforward to …

Ion migration in halide perovskite films leads to device degradation and impedes large scale
commercial applications. We use transient ion-drift measurements to quantify activation …

Qualitative and quantitative studies of the oxidation of polycrystalline copper (Cu) thin films
upon exposure to ambient air conditions for long periods (on the order of several months) …

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated
during the fabrication of silicon samples and devices. The different mechanisms responsible …

Point defects in metal halide perovskites play a critical role in determining their properties
and optoelectronic performance; however, many open questions remain unanswered. In this …

The critical operation needed to achieve monolithic three-dimensional integrated circuits is
obtaining single-crystal, device-quality semiconductor material for upper layer active circuits …

This article combines an extensive literature review of new experimental data on properties
of Cu, Ni and Co and their precipitates in silicon with a discussion of experimental data …

Atomic defects in semiconductors such as vacancies, interstitials, or dopants can lead to
additional electronic states within the bandgap. These atomic defects are considered …

Transient ion drift experiments designed to obtain reliable values for the intrinsic copper
diffusivity in silicon are reported. From these measurements, the diffusion barrier of Cu in Si …