Characterization of the thermal and solutal Marangoni flows of opposite directions developing in a cylindrical liquid bridge under zero gravity
C Jin, A Sekimoto, Y Okano, H Minakuchi, S Dost - Physics of Fluids, 2020 - pubs.aip.org
Numerical simulations of the thermo-solutal Marangoni convection developing in a Si–Ge
liquid bridge of a floating-zone system have been performed under zero gravity. Half of the …
liquid bridge of a floating-zone system have been performed under zero gravity. Half of the …
Modeling optical floating zone crystal growth in a high-pressure, single-lamp furnace
SS Dossa, JJ Derby - Journal of Crystal Growth, 2022 - Elsevier
An optical floating zone (OFZ) model is developed, validated, and applied to obtain initial
results for crystal growth in a novel high-pressure, single-lamp furnace. Computation with a …
results for crystal growth in a novel high-pressure, single-lamp furnace. Computation with a …
Effect of rotating magnetic field on thermal convection and dopant transport in floating-zone crystal growth
Y Zou, H Huang, G Zhu, X Zhou - Microgravity Science and Technology, 2020 - Springer
A three-dimensional numerical study was carried out to understand the effects of rotating
magnetic field on thermocapillary convection and impurity concentration distribution in a …
magnetic field on thermocapillary convection and impurity concentration distribution in a …
3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon
crystal growth process to investigate the fluid flow and solid–liquid interface. To study the …
crystal growth process to investigate the fluid flow and solid–liquid interface. To study the …
液桥内热质耦合对流不稳定性及旋转磁场法控制
邹勇， 朱桂平， 李来， 黄护林 - 力学学报, 2017 - lxxb.cstam.org.cn
浮区法因具有无坩埚接触污染的生长优点而成为生长高完整性和高均匀性单晶材料的重要技术.
但熔体中存在的毛细对流会给浮区法晶体生长带来极大挑战, 这是由于对流的不稳定会导致晶体 …
但熔体中存在的毛细对流会给浮区法晶体生长带来极大挑战, 这是由于对流的不稳定会导致晶体 …
Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal …
An important step in the fabrication of many modern semiconductor materials and devices is
the crystal growth process. These processes take place in high-temperature furnaces using …
the crystal growth process. These processes take place in high-temperature furnaces using …
Precision pulse shape simulation for proton detection at the Nab experiment
The Nab experiment at Oak Ridge National Laboratory, USA, aims to measure the beta-
antineutrino angular correlation following neutron β decay to an anticipated precision of …
antineutrino angular correlation following neutron β decay to an anticipated precision of …
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon
In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was
carried out. The numerical model includes natural convection, thermocapillary convection …
carried out. The numerical model includes natural convection, thermocapillary convection …
Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals
K Surovovs, M Surovovs, A Sabanskis, J Virbulis… - Crystals, 2022 - mdpi.com
The distribution of dopants and impurities in silicon grown with the floating zone method
determines the electrical resistivity and other important properties of the crystals. A crucial …
determines the electrical resistivity and other important properties of the crystals. A crucial …
3D global heat transfer model on floating zone for silicon single crystal growth
In this paper, a three‐dimensional global heat transfer model to describe the floating zone of
silicon single‐crystal growth is proposed. The steady‐state calculations considering argon …
silicon single‐crystal growth is proposed. The steady‐state calculations considering argon …