Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …

Conventional neuro-computing architectures and artificial neural networks have often been
developed with no or loose connections to neuroscience. As a consequence, they have …

Flexible electronic devices have received great attention in the fields of foldable electronic
devices, wearable electronic devices, displays, actuators, synaptic bionics and so on …

The development of the resistive switching cross-point array as the next-generation platform
for high-density storage, in-memory computing and neuromorphic computing heavily relies …

We report on the development of hybrid organic–inorganic material-based flexible memristor
devices made by a fast and simple electrochemical fabrication method. The devices consist …

Recent advances in oxide-based resistive switching devices have made these devices very
promising candidates for future nonvolatile memory applications. However, several key …

In this work, we report on the fabrication of resistive random-access memory cells based on
electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar …

The bipolar memristive switching of stoichiometric crystalline Ge 2 Sb 2 Te 5 (GST) thin film
has been demonstrated. In contrast to the filamentary switching reported previously for a …

Threshold switching (TS) memristors can be used as artificial neurons in neuromorphic
systems due to their continuous conductance modulation, scalable and energy-efficient …

Electrochemical metallization memories have received much attention as candidates for
next generation non-volatile memory applications, due to their fast switching speed, simple …