Intrinsic variation effect in memristive neural network with weight quantization
To analyze the effect of the intrinsic variations of the memristor device on the neuromorphic
system, we fabricated 32× 32 Al 2 O 3/TiO x-based memristor crossbar array and …
system, we fabricated 32× 32 Al 2 O 3/TiO x-based memristor crossbar array and …
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM
(RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile …
(RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile …
A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering
Y Qin, Z Wang, Y Ling, Y Cai, R Huang - Electronics, 2021 - mdpi.com
Resistive random-access memory (RRAM) with the ability to store and process information
has been considered to be one of the most promising emerging devices to emulate synaptic …
has been considered to be one of the most promising emerging devices to emulate synaptic …
Design of resistive random access memory cell and its architecture
This paper provides an insight into an alternative technology which makes use of new circuit
element called memristor which can be scaled down to advanced technology generation …
element called memristor which can be scaled down to advanced technology generation …
Employing the Empirical Mode Decomposition to Denoise the Random Telegraph Noise
Random Telegraph Noise (RTN) is a stochastic phenomenon which leads to characteristic
variations in electronic devices. Finding features of this signal may result in its modeling and …
variations in electronic devices. Finding features of this signal may result in its modeling and …