Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature
Single photon emitters, preferably working at room temperature, are crucial components of a
diverse set of quantum technologies. Nanowire-supported quantum dots (NWQDs) of InGaN …
diverse set of quantum technologies. Nanowire-supported quantum dots (NWQDs) of InGaN …
Manifestation of unconventional biexciton states in quantum dots
Although semiconductor excitons consist of a fermionic subsystem (electron and hole), they
carry an integer net spin similar to Cooper-electron-pairs. While the latter cause …
carry an integer net spin similar to Cooper-electron-pairs. While the latter cause …
Ultrafast, polarized, single-photon emission from m-plane InGaN quantum dots on GaN nanowires
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots
(QDs) embedded on the side-walls of GaN nanowires. A combination of electron …
(QDs) embedded on the side-walls of GaN nanowires. A combination of electron …
Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots
The built-in dipole moments of excitonic and multiexcitonic complexes of GaN/AlN quantum
dots (charged and uncharged excitons and biexcitons) are investigated in detail, both …
dots (charged and uncharged excitons and biexcitons) are investigated in detail, both …
Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
We present here a combined experimental and theoretical analysis of the radiative
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …
Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
M Hrytsaienko, M Gallart, M Ziegler, O Cregut… - Journal of Applied …, 2021 - pubs.aip.org
c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum
nanostructures that exhibit single photon emission properties up to room temperature and …
nanostructures that exhibit single photon emission properties up to room temperature and …
High temperature stability in non‐polar (11 ̄2 0) InGaN quantum dots: Exciton and biexciton dynamics
We report on optical studies of non‐polar InGaN quantum dots grown on the (11 ̄2 2)
plane. Excitonic and biexcitonic complexes are identified by their power dependence and …
plane. Excitonic and biexcitonic complexes are identified by their power dependence and …
Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot
S Amloy, ES Moskalenko, M Eriksson… - Applied Physics …, 2012 - pubs.aip.org
The dynamics of the exciton and the biexciton related emission from a single InGaN
quantum dot (QD) have been measured by time-resolved microphotoluminescence …
quantum dot (QD) have been measured by time-resolved microphotoluminescence …
Shielding electrostatic fields in polar semiconductor nanostructures
Polar semiconductor materials enable a variety of classic and quantum-light sources, which
are optimized continuously. However, one key problem—the inherent electric crystal …
are optimized continuously. However, one key problem—the inherent electric crystal …
InGaN/GaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect
We report the study of the fast rise time and decay time in the ps time scale of the excitonic
luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including …
luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including …