We investigate the effects of the post-deposition thermal annealing temperature on the
physical and chemical structure of zinc oxynitride (ZnON) thin films and on the electrical …

This work presents a strategy of nitrogen anion doping to suppress negative gate-bias
illumination instability. The electrical performance and negative gate-bias illumination …

Amorphous oxide semiconductors have attracted attention in electronic device applications
because of their high electrical uniformity over large areas, high mobility, and low …

In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-
film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence …

基于金属氧化物半导体(MOS) 的薄膜晶体管(TFT) 由于较高的场效应迁移率(μFE),
极低的关断漏电流和大面积电性均匀等特点, 已成为助推平板显示或柔性显示产业发展的一项 …

Oxide TFTs are becoming the mainstream backplane technology for high-resolution large
screen displays, while LTPS TFTs are mostly used for high-end portable smart devices …

Recently, amorphous oxide semiconductors have gained significant interest due to their low-
temperature processability, high mobility, and high areal uniformity for display backplanes …

TFTs with zinc oxynitride (ZnON) as active layer were developed, and a saturation mobility
over 50 cm2/Vs was achieved. The ZnON TFTs show superior I‐V performance and Vth …

The authors investigate the low-temperature carrier transport mechanism in high-mobility
zinc oxynitride (ZnON) thin-film transistors (TFTs) over a wide range of operating …

We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-
ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to …