Research progress and development prospects of enhanced GaN HEMTs
L Han, X Tang, Z Wang, W Gong, R Zhai, Z Jia… - Crystals, 2023 - mdpi.com
With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …
A comprehensive overview of the temperature-dependent modeling of the high-power GaN HEMT technology using mm-wave scattering parameter measurements
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged
as an attractive candidate for high-frequency, high-power, and high-temperature …
as an attractive candidate for high-frequency, high-power, and high-temperature …
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped
AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental …
AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental …
Temperature-sensitivity of two microwave hemt devices: Algaas/gaas vs. algan/gan heterostructures
The goal of this paper is to provide a comparative analysis of the thermal impact on the
microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and …
microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and …
A GaN-HEMT active drain-pumped mixer for S-band FMCW radar front-end applications
This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN)
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
A El Hadi Khediri, B Benbakhti, JC Gerbedoen… - Applied Physics …, 2022 - pubs.aip.org
The impact of Cubic Silicon Carbide (3C-SiC) transition layer on breakdown voltage and
frequency performance of GaN high electron mobility transistors is investigated. A …
frequency performance of GaN high electron mobility transistors is investigated. A …
A thorough evaluation of GaN HEMT degradation under realistic power amplifier operation
In this paper, we experimentally investigate the effects of degradation observed on 0.15-µm
GaN HEMT devices when operating under realistic power amplifier conditions. The latter will …
GaN HEMT devices when operating under realistic power amplifier conditions. The latter will …
Transconductance overshoot, a new trap-related effect in AlGaN/GaN HEMTs
G Zhan, F Rampazzo, C De Santi… - … on Electron Devices, 2023 - ieeexplore.ieee.org
DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN
channel layer were compared. An abnormal transconductance (overshoot accompanied by …
channel layer were compared. An abnormal transconductance (overshoot accompanied by …
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach
K Wang, H Jiang, Y Liao, Y Xu, F Yan, X Ji - Electronics, 2022 - mdpi.com
In this paper, a novel approach that combines technology computer-aided design (TCAD)
simulation and machine learning (ML) techniques is demonstrated to assist the analysis of …
simulation and machine learning (ML) techniques is demonstrated to assist the analysis of …