Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
D Liang, T Wei, J Wang, J Li - Nano Energy, 2020 - Elsevier
In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …
[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …
electronics, the development of several new applications on the SiC material platform is …
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-
dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D …
dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D …
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9
Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing
to their absence of dangling bonds and their intriguing low‐dimensional properties. The …
to their absence of dangling bonds and their intriguing low‐dimensional properties. The …
NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: study of UV light illuminations and humidity
Transition metal dichalcogenides (TMDs) have gained extensive interest due to their
phenomenal optoelectrical and electrochemical properties. Recently, TMDs are used as one …
phenomenal optoelectrical and electrochemical properties. Recently, TMDs are used as one …
[HTML][HTML] Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting
The combination of earth-abundant catalysts and semiconductors, for example,
molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale …
molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale …
[HTML][HTML] Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride
(GaN) and its photodetection properties have been reported in the present work. Surface …
(GaN) and its photodetection properties have been reported in the present work. Surface …
Electronic, magnetism, and optical properties of transition metals adsorbed g-GaN
Z Cui, K Bai, X Wang, E Li, J Zheng - Physica E: Low-dimensional Systems …, 2020 - Elsevier
The electronic, magnetism, and optical absorption behaviors of transition metals adsorbed g-
GaN systems were investigated by employing density functional theory based on first …
GaN systems were investigated by employing density functional theory based on first …
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
For increasing the restricted bit-density in the conventional binary logic system, extensive
research efforts have been directed toward implementing single devices with a two …
research efforts have been directed toward implementing single devices with a two …
A two-dimensional MoS2/WSe2 van der Waals heterostructure for enhanced photoelectric performance
K Si, J Ma, C Lu, Y Zhou, C He, D Yang, X Wang… - Applied Surface …, 2020 - Elsevier
Fabricating a two-dimensional (2D) van der Waals heterostructure is an efficient strategy to
improve the photoelectric performance of 2D materials, thus providing a new possibility for …
improve the photoelectric performance of 2D materials, thus providing a new possibility for …