DL Hall, LF Voss, P Grivickas, M Bora… - IEEE Electron …, 2020 - ieeexplore.ieee.org
To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have …
E Gaubas, E Simoen… - ECS Journal of Solid State …, 2016 - iopscience.iop.org
A review on applications of the contact-less carrier inspection techniques for characterization of various materials is presented, based on recording of the microwave …
The paper provides the information on the effects of rapid (1 min) high pressure high temperature (RHPHT) annealing of synthetic Ib-type diamond plates at temperatures (1900° …
We investigated carrier dynamics and photoluminescence in undoped and n-type phosphorus-doped diamond epilayers under interband picosecond-pulse photoexcitation at …
E Gaubas, T Čeponis, L Deveikis… - Semiconductor …, 2018 - iopscience.iop.org
A comprehensive study of the electrical characteristics in Schottky diodes made of GaN: C grown by hydride vapour phase epitaxy (HVPE) technology has been reported. The Schottky …
E Gaubas, T Ceponis, L Deveikis, V Kalesinskas… - Materials Science in …, 2020 - Elsevier
Cadmium zinc telluride (CZT) is a promising material for the room temperature detection and spectroscopy of ionizing radiations. Two sets of samples, exhibiting good and unacceptable …
The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier …
ВА Мартинович, ИА Хорунжий, МС Русецкий… - 2016 - rep.bntu.by
В статье на основе синтетического алмаза типа Ib изготовлен теплоотвод со встроенными терморезисторами микрометровых размеров. Теплоотвод представляет …