Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

The coating of complex three-dimensional structures with ultrathin metal films is of great
interest for current technical applications, particularly in microelectronics, as well as for basic …

Current nanopatterning techniques used for integrated circuit fabrication typically rely on a
combination of deposition, lithography, and etch steps. Due to alignment issues …

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …

Because semiconductor devices have become ultraminiaturized, the degradation of
conductivity due to the resistivity size effect of metal thin films is an unavoidable problem …

Understanding the growth mechanisms during the early stages of atomic layer deposition
(ALD) is of interest for several applications including thin film deposition, catalysis, and area …

Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium
oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2, 3-dimethylbutadiene …

The ultrathin and continuous ruthenium (Ru) film was deposited through an improved atomic
layer deposition (ALD) process with a discrete feeding method (DFM), called DF-ALD …

Featured Application Metal gate of CMOS devices. Abstract The continuous down-scaling of
complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been …

The process characteristics, the surface chemistry, and the resulting film properties of Ru
deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1, 4-cyclohexadienyl) Ru …