Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

Recent efforts have been heavily devoted to the development of next‐generation
optoelectronic devices based on 2D materials, due to their unique optical properties that are …

In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-
loss transmission and the availability of optical gain in this spectral region. For chip-based …

Intensive efforts have been devoted to the exploration of new optoelectronic devices based
on two-dimensional transition-metal dichalcogenides (TMDCs) owing to their strong light …

Abstract 2D materials, such as graphene, black phosphorous and transition metal
dichalcogenides, have gained persistent attention in the past few years thanks to their …

The realization of gigahertz bandwidth modulators out of silicon-based technology in the
early 2000s marked a cornerstone of silicon photonics development. While modulation …

In recent years, the integration of graphene and related two-dimensional (2D) materials in
optical fibers have stimulated significant advances in all-fiber photonics and optoelectronics …

Silicon (Si) photonics have established as leading technologies in addressing the rapidly
increasing demands of huge data transfer in optical communication systems with compact …

Graphene integrated photonics provides several advantages over conventional Si
photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient …

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene
photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is …