A method for in situ high-bandwidth junction temperature estimation of insulated-gate
bipolar transistors is introduced in this paper. The method is based on the acquisition of the …

This paper proposes a methodology for active thermal control of power electronic modules
in ac applications, which includes a loss manipulation unit, a thermal observer structure, and …

Modern power converters designed with wide band-gap (WBG) semiconductors are known
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …

Silicon carbide (SiC) devices are considered as key enablers for the development of highly
efficient and compact dc-dc converters for low-and medium-voltage applications. Besides …

A multiple stage gate driver for SiC MOSFETs based on a switched resistor topology is
introduced and a hardware realization is presented. The measurement setup is shown in …

This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …

Non-destructive mapping of underground utilities is one of the fundamental concepts of
subsurface imaging technology that has a great contribution to the improvement of many …

This paper presents an intelligent gate driver for paralleled silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (MOSFETs). Commercial gate drivers often slow down …

This article presents a numerical method in combination with a device simulation model
used to analyse the parallel connection of several silicon carbide (SiC) metal oxide …

In this work, a multiple stage gate driver based on a switched gate resistor topology for an
insulated-gate bipolar transistor (IGBT) is presented. An optimization procedure to reduce …