Cathodoluminescence (CL) nanoscopy is proven to be a powerful tool to explore nanoscale
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …

Micro light-emitting diodes (μLEDs) are expected to revolutionize the display technology due
to their advantages over the current LCD and OLED technology and the possibility to use …

III-Nitride micro-LEDs are promising building blocks for the next generation of high
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …

This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …

Ultra-thin solar cells are of significant interest for use in space due to their intrinsic radiation
tolerance, which may allow them to be used in particularly harsh radiation environments …

Abstract GaN/InGaN quantum wells (QWs), widely used as the active region in blue and
green light emitters, are susceptible to structural degradation at temperatures above 900° C …

In AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the large valence band
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …

Radiative and nonradiative recombination processes are investigated in the temperature
range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown …

We study the impact of strain engineering by exploring the influence of the number of
superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on the …

Red‐emitting (≈ 643 nm) InGaN multiquantum well active device layers and micro‐LEDs
are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN …