This article addresses the classical problem of determining the extrinsic resistances (RG,
RS, and RD) of field-effect transistors (FETs) and, in particular, of high-electron-mobility …

Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors
at a high frequency, the traditional equivalent circuit model cannot accurately describe the …

Latin America is a vast region of the American continents, spanning the southern part of
North America, Central America, South America, and the Caribbean, covering 21 million km …

In this paper a straightforward method to determine the parasitic gate resistance (R g) of
GaN FET is introduced. The method uses a simple linear regression to directly determine the …

The last seven years, Cinvestav-GDL and CICESE, two of the most important research
centers in Mexico, have been working together in several microwave research topics. This …

The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-
Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching …

Based on transmission line theory, a distributed channel equivalent circuit model was
deduced for GaN HEMTs, which confirmed the reliability of the small-signal model extraction …

Los transistores de nitruro de galio (GaN) son fuertes candidatos para reemplazar a los
tubos de vacío en aplicaciones de amplificación de mediana potencia es los sistemas de …

Utilizando los métodos de-embedding clásico y el de-embedding directo, en esta tesis se
presenta una nueva filosofía de la técnica Thru-Reflect-Line (TRL) multilíneas donde sus …

Las tecnologías más prometedoras en el desarrollo de las telecomunicacionesson aquellas
basadas en materiales de banda prohibida ancha, tales como lossemiconductores de …