State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Low-noise amplifier for next-generation radio astronomy telescopes: Review of the state-of-the-art cryogenic LNAs in the most challenging applications
CC Chiong, Y Wang, KC Chang… - IEEE Microwave …, 2021 - ieeexplore.ieee.org
Radio astronomy is a subfield of astronomy that explores the universe via radio signals up to
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
A 50-nm gate-length metamorphic HEMT technology optimized for cryogenic ultra-low-noise operation
This article reports on the investigation and optimization of cryogenic noise mechanisms in
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …
Design of a D-band CMOS amplifier utilizing coupled slow-wave coplanar waveguides
This paper validates a design and modeling methodology of coupled slow-wave
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
A 67–116-GHz cryogenic low-noise amplifier in a 50-nm InGaAs metamorphic HEMT technology
F Thome, F Schäfer, S Türk… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents a 67–116-GHz low-noise amplifier (LNA) module with state-of-the-art
cryogenic noise performance. The LNA is based on a monolithic microwave integrated …
cryogenic noise performance. The LNA is based on a monolithic microwave integrated …
Broadband MMIC LNAs for ALMA band 2+ 3 with noise temperature below 28 K
D Cuadrado-Calle, D George, GA Fuller… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
Recent advancements in transistor technology, such as the 35 nm InP HEMT, allow for the
development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) …
development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) …
Design of cryogenic LNAs for high linearity in space applications
This paper presents a 2 GHz low noise amplifier (LNA) implemented in 180 nm
complementary metal oxide semiconductor (CMOS) technology designed for cryogenic …
complementary metal oxide semiconductor (CMOS) technology designed for cryogenic …
-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications
Y Wang, F Lin, H Sun, H Wu, C Xu… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This article presents a-band integrated transceiver (T/R) single chip based on gallium nitride
(GaN) high electron mobility transistor (HEMT) technology for active electronically scanned …
(GaN) high electron mobility transistor (HEMT) technology for active electronically scanned …
Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Based on two low-noise amplifier (LNA) millimeter-wave integrated circuits (MMICs), this
paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic …
paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic …
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs
We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for
Ka-and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging …
Ka-and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging …