In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

Abstract Crystalline properties of (1–2)-μm-thick AlN buffer layers grown by plasma-assisted
molecular-beam epitaxy (PA MBE) on c-Al 2 O 3 substrates with different AlN nucleation …

Insightful understanding of defect properties and prevention of defect damage are among
the biggest issues in the development of photoelectronic devices based on wide-gap III …

Various procedures, such as using a buffer layer or multi-growth mode modification, were
investigated for the growth of AlN layers on sapphire substrate at high temperatures by …

This book systematically introduces physical characteristics and implementations of III-
nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on …

The transmission electron microscope (TEM) is a powerful imaging, diffraction and
spectroscopy tool that has revolutionized the field of microscopy. It has contributed to …

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon (111) substrates are grown
by using multi-stacked strained superlattices layer structures. Atomic force microscopy, X-ray …

A novel structure was built by alternating high and low V/III ratios to improve the quality of the
AlN layer at a lower temperature (1100° C) as compared with conventional growth …

Epitaxial films of AlN were grown on a sapphire substrate with a miscut of 0.38°±0.02°
towards the m-plane by metalorganic vapour phase epitaxy. A low temperature nucleation …

AlN is a piezoelectric material used in telecommunication applications due to its high
surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is …