Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Review and Perspective of Hf-based High-k Gate Dielectrics on Silicon
G He, Z Sun, G Li, L Zhang - Critical Reviews in Solid State and …, 2012 - Taylor & Francis
HfO2 has been recently highlighted as the most promising high-k dielectrics for the next-
generation CMOS device applications due to its relatively high dielectric constant and …
generation CMOS device applications due to its relatively high dielectric constant and …
Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer
BY Kim, HW Park, SD Hyun, YB Lee… - Advanced Electronic …, 2022 - Wiley Online Library
Fluorite structured ferroelectrics, such as (Hf, Zr) O2, attract much interest due to their
scalability and compatibility with complementary metal‐oxide semiconductors, which make …
scalability and compatibility with complementary metal‐oxide semiconductors, which make …
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
The effect of nitrogen doping by the NH 3 plasma treatment approach on the resistive
switching properties of a HfO 2-based resistive random access memory (RRAM) device is …
switching properties of a HfO 2-based resistive random access memory (RRAM) device is …
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors
Downscaling of complementary metal-oxide semiconductor (CMOS) gate stacks requires the
introduction of ultra-thin and high-k dielectrics such as HfO2. Atomic layer deposition (ALD) …
introduction of ultra-thin and high-k dielectrics such as HfO2. Atomic layer deposition (ALD) …
Comparative study on atomic layer deposition of HfO 2 via substitution of ligand structure with cyclopentadiene
With the scaling down of complementary metal–oxide semiconductors (CMOS), atomic layer
deposition of high-quality HfO2 has emerged as a key technology for ultrathin and high-k …
deposition of high-quality HfO2 has emerged as a key technology for ultrathin and high-k …
Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic …
Electrochemical metallization (ECM) threshold switches are in great demand for various
applications such as next-generation logic technology, future memory, and neuromorphic …
applications such as next-generation logic technology, future memory, and neuromorphic …
Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition
Alkoxide precursors have been highlighted for depositing carbon-free films, but their use in
Atomic Layer Deposition (ALD) often exhibits a non-saturated growth. This indicates no self …
Atomic Layer Deposition (ALD) often exhibits a non-saturated growth. This indicates no self …
Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target
B Aguirre, RS Vemuri, D Zubia, MH Engelhard… - Applied Surface …, 2011 - Elsevier
Hafnium oxide (HfO2) thin films have been made by radio-frequency (rf) magnetron-
sputtering onto Si (100) substrates under varying growth temperature (Ts). HfO2 ceramic …
sputtering onto Si (100) substrates under varying growth temperature (Ts). HfO2 ceramic …
Structure and properties of Hf-ON films prepared by high-rate reactive HiPIMS with smoothly controlled composition
Hafnium oxynitride ceramics were prepared in the form of thin films by high-power impulse
magnetron sputtering of Hf in various Ar+ O 2+ N 2 gas mixtures. Smooth composition …
magnetron sputtering of Hf in various Ar+ O 2+ N 2 gas mixtures. Smooth composition …