An overview of advances in high reliability gate driving mechanisms for SiC MOSFETs
SiC power devices exhibit low on-resistance and are capable of processing high switching
frequencies at elevated temperatures. When SiC MOSFETs are employed as switch …
frequencies at elevated temperatures. When SiC MOSFETs are employed as switch …
A novel isolated resonant gate driver with adjustable duty ratio for SiC MOSFET
Q Yue, H Peng, Q Tong, Y Kang - IEEE Journal of Emerging …, 2022 - ieeexplore.ieee.org
Resonant gate driver is a promising technique to save gate driver loss at high switching
frequencies to further promote the integration level of gate driver with power modules. State …
frequencies to further promote the integration level of gate driver with power modules. State …
A driving loss and speed co-optimized series resonant gate driver with novel time segmented methodology for high frequency SiC MOSFETs
Resonant gate drive (RGD) is the more efficient solution to drive SiC MOSFETs at high
switching frequencies with effective gate driver energy saving. It adjusts driving …
switching frequencies with effective gate driver energy saving. It adjusts driving …
Investigations on Resonant Gate Drivers for Power MOSFETs
N Sakib - 2023 - search.proquest.com
Abstract In recent years, Wide Bandgap (WBG) semiconductor based power devices such as
Metal Oxide Semiconductor Field Effect Transistors (MOSFET) have matured rapidly and are …
Metal Oxide Semiconductor Field Effect Transistors (MOSFET) have matured rapidly and are …
Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs
F Akram - 2021 - diva-portal.org
Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those
of silicon (Si) counterparts. The improved physical features have provided better faster …
of silicon (Si) counterparts. The improved physical features have provided better faster …
High efficiency base drive designs for power converters using silicon carbide bipolar junction transistors
H Zhu - 2019 - etheses.whiterose.ac.uk
This thesis explores the base driver designs for Silicon Carbide Bipolar Junction Transistors
(SiC BJTs) and their applications for power converters. SiC is a wide bandgap …
(SiC BJTs) and their applications for power converters. SiC is a wide bandgap …