The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits
their integration into practical applications. While structural defects in epitaxial GeSn layers …

The natural and true band profiles at heterojunctions formed by hexagonal Si x Ge 1− x
alloys are investigated by a variety of methods: density-functional theory for atomic …

A divergent microstructure was fabricated by complementary metal–oxide–semiconductor
compatible processes on the central region of a Ge p–i–n photodetector to enhance the …

Quantum photonic circuits have recently attracted much attention owing to the potential to
achieve exceptional performance improvements over conventional classical electronic …

Strain-engineered graphene has garnered much attention recently owing to the possibilities
of creating substantial energy gaps enabled by pseudo-magnetic fields (PMFs). While …

Despite having achieved drastically improved lasing characteristics by harnessing tensile
strain, the current methods of introducing a sizable tensile strain into GeSn lasers require …

In the quest for practical group IV lasers, researchers have proposed a few ideas such as
strain engineering of Ge and alloying of Sn into Ge. Both approaches fundamentally alter …

After decades of advancement, optoelectronic technology has emerged as a pivotal player
in various domains such as optical communication, optical interconnection, and optical …

Germanium (Ge) is one of the most promising material platforms to enable the realization of
monolithically integrated laser on silicon because it is a group-IV material with a pseudo …