Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …

The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …

1. Introduction Recently, blue-or ultraviolet-light-emitting lasers have been developed using
GaN and InGaN-based compound semiconductors.*** These device structures have been …

The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

We have studied the effect of the III/V ratio and substrate temperature on the growth of GaN
and A1N films on Si (1 1 1) substrates by molecular beam epitaxy, where active nitrogen …

Wurtzite GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam
epitaxy on Si (111) and c-sapphire substrates. The nanocolumns density and diameter (600 …

The electronic band structures of wurtzite GaN and InN are calculated by the empirical
pseudopotential method (EPM) with the form factors adjusted to reproduce band features …