Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation
R Zhang, PC Huang, JC Lin, N Taoka… - … on Electron Devices, 2013 - ieeexplore.ieee.org
An ultrathin equivalent oxide thickness (EOT) HfO 2/Al 2 O 3/Ge gate stack has been
fabricated by combining the plasma postoxidation method with a 0.2-nm-thick Al 2 O 3 layer …
fabricated by combining the plasma postoxidation method with a 0.2-nm-thick Al 2 O 3 layer …
The evolution of scaling from the homogeneous era to the heterogeneous era
M Bohr - 2011 international electron devices meeting, 2011 - ieeexplore.ieee.org
Traditional MOSFET scaling served our industry well for more than three decades by
providing continuous improvements in transistor performance, power and cost. This was the …
providing continuous improvements in transistor performance, power and cost. This was the …
High-Mobility Ge pMOSFET With 1-nm EOT Gate Stack Fabricated by Plasma Post Oxidation
R Zhang, T Iwasaki, N Taoka… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
An ultrathin equivalent oxide thickness (EOT) Al 2 O 3/GeO x/Ge gate stack with a superior
GeO x/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide …
GeO x/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide …
Optimization of the Interface and a High-Mobility GaSb pMOSFET
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and …
effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and …
The past and future of multi-gate field-effect transistors: Process challenges and reliability issues
Y Sun, X Yu, R Zhang, B Chen… - Journal of …, 2021 - iopscience.iop.org
This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process
technologies and compares the device performance and reliability characteristics of the …
technologies and compares the device performance and reliability characteristics of the …
1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation
R Zhang, N Taoka, PC Huang… - 2011 International …, 2011 - ieeexplore.ieee.org
An ultrathin EOT Al 2 O 3/GeO x/Ge gate stack with a superior GeO x/Ge MOS interface has
been fabricated with a plasma post oxidation method. The properties of the ultra thin GeO …
been fabricated with a plasma post oxidation method. The properties of the ultra thin GeO …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …