An efficient method is developed for multiband simulation of quantum transport in nanowire
electronic devices within nonequilibrium Green's function formalism. The efficiency relies on …

Theoretically, the upper limit performance of nanoscale transistor should be limited by
carrier transit time through the channel as the charge in channel cannot follow the gate …

This paper presents a numerical simulation study for electrical characteristics of double-gate
(DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics which …

Simulation of quantum carrier transport in nanodevices with non-equilibrium Green's
function approach is computationally very challenging. One major part of the computational …

Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited
by them when employed in circuits for microwave and RF applications. In this work, a …

A reduced-order method is presented to efficiently calculate Green's functions connecting
contacts or leads to all the points in a nanostructure in the coherent transport limit. The …

This paper presents a theoretical simulation study for electrical characteristics of double-
gate (DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics …

Scanning gate microscopy of quantum point contacts (QPC) in the integer quantum Hall
regime is considered in terms of the scattering wave functions with a finite-difference …

A charge-based quantum correction model for the gate and drain current noise in nanoscale
MOSFETs is presented. The model is analytically formulated by incorporating the quantum …

The physics-based compact gate and drain current noise models of nanoscale MOSFETs at
low frequencies are presented. The models are primarily developed to be implemented in …