This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …

The PowerChip research program is developing technologies to radically improve the size,
integration, and performance of power electronics operating at up to grid-scale voltages (eg …

The dynamic on-state resistance (RDSON) behavior of commercial GaN devices is very
important for a GaN-based converter. Since the zero-voltage switching techniques are …

This paper reports on the impact of soft-and hard-switching conditions on the dynamic ON-
resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special …

To enable the widespread adoption of GaN products, the industry needs to be convinced of
product-level reliability. The difficulty with product-level reliability lies with the diverse range …

The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-
GaN gate is investigated under hard-switching conditions. The non-monotonic performance …

This paper reports on a comprehensive on-state reliability evaluation on depletion-mode (V
TH~-4V) AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS …

This paper investigates the trapping mechanisms in gate-injection transistors (GITs) without
and with a pdrain electrode, referred to as GITs and Hybrid-Drain-embedded GITs (HD …

This paper presents a detailed analysis of the electroluminescence (EL) and short-term
degradation processes related to hot electrons that occur in AlGaN/GaN-based high …

We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance
(RON) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly …