We study the impact of different interlayers (ILs) and ferroelectric materials on charge
trapping during the endurance fatigue of Si ferroelectric field effect transistor (FeFET) with …

The discovery of ferroelectricity in hafnium oxide spurred a growing research eld due to
hafnium oxides compatibility with processes in microelectronics as well as its unique …

The impact of the interface layer on charge trapping and polarization switching at multiple
temperatures is investigated. At high temperatures, a ferroelectric field effect transistor with a …

FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity
non-volatile memory and neuromorphic devices. However, charge trapping significantly …

This work investigates the endurance characteristic of Si FeFET with Hf0. 5Zr0. 5O2
ferroelectric. A fully CMOS-compatible method is shown to improve endurance: insertion of …

This chapter provides a brief and concise overview of ferroelectric memories based on the
hafnium-oxide. Ferroelectricity, discovered in Rochelle salt for the first time in 1920 by …

Modern microelectronics seeks to miniaturize transistors and follows Moore's Law, seeking
faster logic, lower power usage, and denser storage. Progress in this direction can no longer …