Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the …
The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
C Liu, J Guo, L Yu, J Li, M Zhang, H Li, Y Shi… - Light: Science & …, 2021 - nature.com
Abstract Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad …
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in …
The library of two-dimensional (2D) materials has been enriched over recent years with novel crystal architectures endowed with diverse exciting functionalities. Bulk perovskites …
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
T Jin, J Mao, J Gao, C Han, KP Loh, ATS Wee… - ACS nano, 2022 - ACS Publications
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …