The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of
lattice parameter and material polarity differences. In this work, we report on the Metal …

The structural and optical properties of high temperature-annealed superlattices of GaN
quantum dots embedded in AlN barrier have been studied by a combination of X-ray …

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high
resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of …

We demonstrate a ten-fold increase in photoluminescence (PL) efficiency from 50 keV H−
ion-implanted InAs/GaAs quantum dots (QDs) at a temperature of 8 K and/or 145 K …

This study reports enhancements in photoluminescence (PL) efficiency resulting from
implanting InAs/GaAs quantum dots with high energy protons without any post-annealing …

Herein, we demonstrate enhancement in photoluminescence (PL) efficiency of InAs
submonolayer quantum dots (QDs) resulting from high-energy proton implantation. To …

After presenting motivation for starting this work was given the following chapter introduces
the concept of quantum dot as an''artificial atom''and discusses some of the theoretical …

This paper treats the impact of post growth tuned InAs/InP quantum dashes'(QDas)
size/composition distribution on carriers' localization and thermal redistribution. The spread …

The work presented in this thesis investigates the characterisation and optimisation of InAs
quantum dots for the purpose of electro-absorption modulators. The modulator is a crucial …