Identifying novel classes of precatalysts for the oxygen evolution reaction (OER by water
oxidation) with enhanced catalytic activity and stability is a key strategy to enable chemical …

A systematic study of the thermally induced reaction of 20 transition metals (Ti, Zr, Hf, V, Nb,
Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, and Cu) with Ge substrates was carried …

Due to Fermi level pinning (FLP), metal‐semiconductor contact interfaces result in a
Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to …

Flash lamp annealing (FLA) is a non-equilibrium annealing method on the sub-second time
scale which excellently meets the requirements of thin-film processing. FLA has already …

The solid-state reaction between a 30-nm-thick Ni film and Ge substrates was investigated
using in situ x-ray diffraction, diffuse light scattering, and four-point probe electrical …

Ti/p-Ge and NiGe/p-Ge contacts are compared on both planar-and fin-based devices. Ti/p-
Ge contacts show low contact resistance, while NiGe/p-Ge devices show short circuit …

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications
covers the basic fundamentals, techniques, applications, and latest developments in the …

We present a comprehensive study on the formation and tuning of the Schottky barrier of
NiGeSn metallic alloys on Ge 1-x Sn x semiconductors. First, the Ni metallization of GeSn is …

For junctionless FETs (JLFETs), an optimal ohmic contact is needed to achieve maximum
drive current. The scaling of the source/drain (S/D) contact area impacts the contact …

We have investigated the reactions of thin Ni films on Ge-on-Si substrates with patterned
structures. For rapid thermal anneals (RTAs) hotter than, an undesirable growth mode is …