In this Article, I review the development of computer simulation techniques for studying
radiation effects in materials from 1946 until 2018. These developments were often closely …

The focused ion beam (FIB) is a powerful tool for fabrication, modification, and
characterization of materials down to the nanoscale. Starting with the gallium FIB, which was …

Laser annealing of semiconductor materials is a processing technique offering interesting
application features when intense, transient and localized heat sources are needed for …

B migration in Si and Ge matrices raised a vast attention because of its influence on the
production of confined, highly p-doped regions, as required by the miniaturization trend. In …

Irradiation tends to increase the concentration of point defects (PDs) in crystalline materials,
whose consecutive interactions with other types of defects, such as dislocation and void, are …

Ion and electron irradiation can be used to modify not only conventional materials such as
silicon, but also nanostructures. This opens up exciting possibilities for basic science studies …

Ion implantation is a very well established technique to introduce dopants in
semiconductors. This technique has been traditionally used for junction formation in …

The development of advanced semiconductor devices relies heavily on technology
computer-aided design. Front-end process simulators model the fabrication of devices …

The effective dopant concentration in p-type Si detectors reduces with irradiation fluence at
low fluences due to the acceptor removal process, which degrades detector performance …

Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation
annealing, and their role in shallow junction formation processes in Si and Ge are reviewed …