Playing with carbon and silicon at the nanoscale

P Mélinon, B Masenelli, F Tournus, A Perez - Nature materials, 2007 - nature.com
Because of its superior properties silicon carbide is one of the most promising materials for
power electronics, hard-and biomaterials. In the solid phase, the electronic and optical …

Enhanced on-chip SERS based biomolecular detection using electrokinetically active microwells

YS Huh, AJ Chung, B Cordovez, D Erickson - Lab on a Chip, 2009 - pubs.rsc.org
Here we present a novel microfluidic technique for on-chip surface enhanced Raman
spectroscopy (SERS) based biomolecular detection, exploiting the use of electrokinetically …

[HTML][HTML] The influence of different silicon adhesion interlayers on the tribological behavior of DLC thin films deposited on steel by EC-PECVD

F Cemin, LT Bim, CM Menezes, MEHM da Costa… - Surface and Coatings …, 2015 - Elsevier
Diamond-like carbon (DLC) is a hydrogenated amorphous carbon (aC: H) thin film material
owing to its unique tribological properties that may open great opportunities for new …

The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

M Rahaman, AG Milekhin, A Mukherjee… - Faraday …, 2019 - pubs.rsc.org
Since the first report in the early 2000s, there have been several experimental configurations
that have demonstrated enhancement and spatial resolution of tip-enhanced Raman …

Structural characterization of amorphous chemical vapor deposited coatings

A Bendeddouche, R Berjoan, E Beche… - Journal of Applied …, 1997 - pubs.aip.org
Chemical bonding and local order around the different atoms of thick amorphous SiC x N y
deposits [0.03⩽ x/(x+ y)⩽ 0.67] prepared with chemical vapor deposition at 1000–1200° C …

Structure and properties of Si incorporated tetrahedral amorphous carbon films prepared by hybrid filtered vacuum arc process

CS Lee, KR Lee, KY Eun, KH Yoon, JH Han - Diamond and Related …, 2002 - Elsevier
The mechanical properties and atomic bond structure of Si incorporated into tetrahedral
amorphous carbon (ta-C) films were investigated. The films were deposited by a filtered …

Raman scattering investigations on disorder and recovery induced by low and high energy ion irradiation on 3C-SiC

N Sreelakshmi, S Amirthapandian… - Materials Science and …, 2021 - Elsevier
The cubic polytype of SiC (3C-SiC) epilayer grown on Si has been irradiated with 200 keV
Si+ ions for various ion doses (0.025 dpa-0.6 dpa) followed by 14 MeV Si+ ion irradiation …

Recent developments in optofluidic-surface-enhanced Raman scattering systems: Design, assembly, and advantages

Y Yin, T Qiu, W Zhang, PK Chu - Journal of Materials Research, 2011 - cambridge.org
Surface-enhanced Raman scattering (SERS) coupled with micro-or nanofluidics integrated
into optofluidic devices offer many advantages over conventional SERS conducted under …

Analysis of ion beam induced damage and amorphization of 6H-SiC by Raman scattering

A Perez-Rodriguez, Y Pacaud, L Calvo-Barrio… - Journal of electronic …, 1996 - Springer
Raman scattering analysis of damaged SiC layers obtained by 200 keV Ge+ ion
implantation into 6H-SiC has been performed as a function of the implanted dose (up to 10 …

Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis

MJ Madito, TT Hlatshwayo, CB Mtshali - Applied Surface Science, 2021 - Elsevier
Single crystals of 6H-SiC wafers were sequentially co-implanted with 360 keV Cs and I ions
to a fluence of 1× 10 16 cm− 2 at room temperature. The Monte Carlo simulation code …