Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: From leakage current analysis to gate stack optimization
K Mukherjee, C De Santi, M Borga, K Geens, S You… - Materials, 2021 - mdpi.com
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes
This article proposes a new junction barrier Schottky diode (JBSD) design based on P-
GaN/N-Ga 2 O 3 heterojunction with faster switching characteristics and higher breakdown …
GaN/N-Ga 2 O 3 heterojunction with faster switching characteristics and higher breakdown …
A simple edge termination design for vertical GaN PN diodes
P Pandey, TM Nelson, WM Collings… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Vertical power devices require significant attention to their edge termination designs to
obtain higher breakdown voltages without substantial increase in ON-state resistance. A …
obtain higher breakdown voltages without substantial increase in ON-state resistance. A …
[HTML][HTML] Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate
In order to study the effect of self-heating of AlGaN/GaN high electron mobility transistors
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
High temperature hydrogen gas sensing property of GaN prepared from α-GaOOH
A Hermawan, Y Asakura, M Kobayashi… - Sensors and Actuators B …, 2018 - Elsevier
Extremely stable gas sensors at elevated temperature (T> 400° C) with rapid detection of
hydrogen gas are urgently demanded especially for hydrogen production industry which …
hydrogen gas are urgently demanded especially for hydrogen production industry which …
Tuning of quasi-vertical GaN FinFETs fabricated on SiC substrates
P Gribisch, RD Carrascon… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this work, we present the fabrication and investigation of the properties of quasi-vertical
gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates …
gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates …
TCAD device modelling and simulation of wide bandgap power semiconductors
Technology computer-aided Design (TCAD) is essential for devices technology
development, including wide bandgap power semiconductors. However, most TCAD tools …
development, including wide bandgap power semiconductors. However, most TCAD tools …
Single event burnout hardening of enhancement mode HEMTs with double field plates
Z Zhen, C Feng, Q Wang, D Niu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Single event burnout (SEB) of enhancement mode GaN high-electron mobility transistors
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …
Investigation of wide-and ultrawide-bandgap semiconductors from impact-ionization coefficients
We survey impact-ionization coefficients for silicon, wide bandgap semiconductors (gallium
nitride and 4H-silicon carbide), and ultrawide-bandgap semiconductors (aluminum gallium …
nitride and 4H-silicon carbide), and ultrawide-bandgap semiconductors (aluminum gallium …