High thermal conductivity 2D materials: From theory and engineering to applications
Transistors are getting close to their physical limitation, and complex chip design
technologies have made the hotspot problem more serious. Graphene and hBN, as …
technologies have made the hotspot problem more serious. Graphene and hBN, as …
Graphene growth on electroformed copper substrates by atmospheric pressure cvd
Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass
production of graphene. CVD synthesis under vacuum is the most employed process …
production of graphene. CVD synthesis under vacuum is the most employed process …
Simultaneous extraction of the grain size, single-crystalline grain sheet resistance, and grain boundary resistivity of polycrystalline monolayer graphene
The electrical properties of polycrystalline graphene grown by chemical vapor deposition
(CVD) are determined by grain-related parameters—average grain size, single-crystalline …
(CVD) are determined by grain-related parameters—average grain size, single-crystalline …
Thermal boundary conductance of monolayer beyond-graphene two-dimensional materials on SiO2 and GaN
C Foss, Z Aksamija - Nanotechnology, 2021 - iopscience.iop.org
Abstract Two-dimensional (2D) materials have emerged as a platform for a broad array of
future nanoelectronic devices. Here we use first-principles calculations and phonon …
future nanoelectronic devices. Here we use first-principles calculations and phonon …
Partial pressure assisted growth of single-layer graphene grown by low-pressure chemical vapor deposition: implications for high-performance graphene FET devices
An attempt has been made to understand the thermodynamic mechanism study of the low-
pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) …
pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) …
Evaluation of the average grain size of polycrystalline graphene using an electrical characterization method
Graphene grown by chemical vapor deposition (CVD) is intrinsically polycrystalline. Since
the electrical properties of graphene are degraded at grain boundaries, the performance of …
the electrical properties of graphene are degraded at grain boundaries, the performance of …
Characteristics of Highly Area‐Mismatched Graphene‐to‐Substrate Transfers and the Predictability of Wrinkle Formation in Graphene for Stretchable Electronics
MDSL Wimalananda, JK Kim… - Advanced Materials …, 2020 - Wiley Online Library
The indirect‐transfer process is the primary technique used to fabricate graphene electrodes
on an arbitrary substrate. The area mismatch between the initial graphene‐Cu substrate and …
on an arbitrary substrate. The area mismatch between the initial graphene‐Cu substrate and …
Electronic transport across extended grain boundaries in graphene
AK Majee, Z Aksamija - Nano Express, 2021 - iopscience.iop.org
Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great
promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor …
promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor …
Preparation and characterization of graphene by chemical vapor deposition and using microscopy and spectroscopic techniques
J Chen - Available at SSRN 4209569, 2022 - papers.ssrn.com
This study is related to a process for producing graphene by providing a plurality of metallic
particles as templates for graphene formation and providing a carbon source. Graphene and …
particles as templates for graphene formation and providing a carbon source. Graphene and …
One-Pot Synthesis of Centimeter-Scale Cu (111) and High-Quality Monolayer Graphene
We report a fast and straightforward preparation of centimeter-sized Cu (111) from
polycrystalline Cu foil by the strain-free abnormal grain growth method and the subsequent …
polycrystalline Cu foil by the strain-free abnormal grain growth method and the subsequent …