The pivotal role of thermal annealing of cadmium telluride thin film in optimizing the performance of CdTe/Si solar cells

B Alshahrani, S Nabil, HI Elsaeedy, HA Yakout… - Journal of Electronic …, 2021 - Springer
The main focus of this framework is the preparation of CdTe nanocrystalline thin films (~ 120
nm) on single crystal p-Si wafers (270 μm) with Miller index (100) using thermal evaporation …

Facile synthesis and characterization of CdS thin films doped by yttrium atoms

S Yılmaz, M Tomakin, İ Polat, E Bacaksız - Applied Physics A, 2023 - Springer
A facile preparation and structural, optical and electrical characterization of undoped and Y-
doped CdS thin films are demonstrated through spray pyrolysis changing doping …

[HTML][HTML] Influence of γ-radiation on the physical characteristics of thermally evaporated nanostructured CdS: Cl films

A Fatehmulla, SA Almawash, AA Albassam… - Journal of King Saud …, 2022 - Elsevier
Abstract Thermally evaporated CdS: Cl films were subjected to gamma irradiation with an
equivalent dose intensity of 4.11 kG/hour for extended periods (60 to 240) minutes. The …

Gamma radiation effect on the structural and optical properties of CdS thin films prepared by spray pyrolysis technique

HA Farroh, RA Zaghlool, M Boshta - Physica Scripta, 2023 - iopscience.iop.org
One way to increase the solar cell efficiency is to increase the range of transmitted visible
light throughout the window layer. This could be achieved via broadening its band gap; an …

Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction

SM Ali, MS AlGarawi, SUD Khan… - Materials Science in …, 2021 - Elsevier
The palladium sulfide/p-type Si (PdS/p-Si) heterojunction was used to investigate the effects
of gamma ray exposure on the structural, optical and current-voltage (I–V) characteristics, for …

[PDF][PDF] Effect of Diffusion Temperature on the some Electrical Properties of CdS: In Thin Films Prepared by Vacuum Evaporation

F Hana'a - Baghdad Science Journal, 2017 - iasj.net
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass
substrates and these films were doped with indium (3%) by thermal diffusion method. The …