Demonstration of a nanosheet FET with high thermal conductivity material as buried oxide: Mitigation of self-heating effect
Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Temperature effect on RF/analog and linearity parameters in DMG FinFET
We systemically investigated the impact of variation in temperature on electrical parameters
for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as …
for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as …
Layout design correlated with self-heating effect in stacked nanosheet transistors
L Cai, W Chen, G Du, X Zhang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
With technology node scaling down to 5 nm, the narrow device geometry confines the
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
Optimized substrate for improved performance of stacked nanosheet field-effect transistor
V Jegadheesan, K Sivasankaran… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The recently proposed stacked nanosheet-field-effect transistor (SNSH-FET) is considered
as a promising candidate for continued scaling with silicon. While using punchthrough …
as a promising candidate for continued scaling with silicon. While using punchthrough …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanoscale thermal transport in vertical gate-all-around junctionless nanowire transistors—Part II: Multiphysics simulation
H Rezgui, C Mukherjee, Y Wang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Today, extensive research has focused on heat propagation in emerging nanoelectronic
devices. With advances in the fabrication of nanowire (NW) transistors, thermal management …
devices. With advances in the fabrication of nanowire (NW) transistors, thermal management …
Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs
SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D
electrostatic control and therefore, have been suggested as potential technology options for …
electrostatic control and therefore, have been suggested as potential technology options for …
Substrate BOX engineering to mitigate the self-heating induced degradation in nanosheet transistor
The continued scaling of 3D transistors into the ultra-scaled-down nanoscale regime causes
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
3D modeling of spatio-temporal heat-transport in III-V gate-all-around transistors allows accurate estimation and optimization of nanowire temperature
Excellent electrostatic control offered by gate-all-around (GAA) geometry makes
multinanowire (multi-NW) MOSFET a promising candidate for sub-10-nm technology nodes …
multinanowire (multi-NW) MOSFET a promising candidate for sub-10-nm technology nodes …
Investigation of self-heating effect on hot carrier degradation in multiple-fin SOI FinFETs
In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in
multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance …
multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance …