Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Susceptor for semiconductor substrate processing apparatus
SJ Jeong, JH Han, YS Choi, JH Park - US Patent App. 29/604,288, 2018 - Google Patents
USD830981S1 - Susceptor for semiconductor substrate processing apparatus - Google
Patents USD830981S1 - Susceptor for semiconductor substrate processing apparatus …
Patents USD830981S1 - Susceptor for semiconductor substrate processing apparatus …
Method of forming a structure on a substrate
T Blanquart, D De Roest - US Patent 10,269,558, 2019 - Google Patents
The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …
Method of forming an enhanced unexposed photoresist layer
JW Maes, KK Kachel, DK De Roest - US Patent 11,022,879, 2021 - Google Patents
The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
Method of processing a substrate and a device manufactured by the same
YH Kim, JW Choi, JJ Woo, TH Yoo - US Patent 10,734,244, 2020 - Google Patents
Provided is a substrate processing method capable of preventing over-etching of a part of a
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
D Kohen, HB Profijt - US Patent 10,236,177, 2019 - Google Patents
HOIL 21/768(2006. 01) HOIL 29/165(2006. 01) HOIL 29/08(2006. 01) HOIL 29/78(2006. 01)
HOIL 29/06(2006. 01) HOIL 29/45(2006. 01) HOIL 23/535(2006. 01) C30B 29/52(2006. 01) …
HOIL 29/06(2006. 01) HOIL 29/45(2006. 01) HOIL 23/535(2006. 01) C30B 29/52(2006. 01) …
Method for forming a semiconductor device structure comprising a gate fill metal
A method for forming a semiconductor device structure is disclosure. The method may
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Apparatus and method for manufacturing a semiconductor device
T Oosterlaken, C De Ridder, L Jdira - US Patent 10,103,040, 2018 - Google Patents
The invention relates to an apparatus for manufacturing a semiconductor device comprising
a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for …
a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for …
Method of selectively depositing a capping layer structure on a semiconductor device structure
A Kuroda, A Kobayashi, D Ishikawa - US Patent 10,910,262, 2021 - Google Patents
D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …