Gate drivers for medium-voltage SiC devices

A Anurag, S Acharya, N Kolli… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

Design considerations for high-voltage insulated gate drive power supply for 10-kV SiC MOSFET applied in medium-voltage converter

L Zhang, S Ji, S Gu, X Huang, JE Palmer… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the
reliability and safety of the gate driver for power semiconductor devices. This article focuses …

Design and multiobjective optimization of an auxiliary wireless power transfer converter in medium-voltage modular conversion systems

K Sun, J Wang, R Burgos, D Boroyevich… - … on Power Electronics, 2022 - ieeexplore.ieee.org
This article proposes an optimized design for a wireless power transfer converter serving as
an auxiliary power supply in a medium-voltage, high modular conversion system. A CLLC …

Medium voltage (13.8 kV) transformer-less grid-connected DC/AC converter design and demonstration using 10 kV SiC MOSFETs

S Ji, X Huang, L Zhang, J Palmer… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
Medium voltage (MV) power converters using high voltage (HV) Silicon Carbide (SiC) power
semiconductors result in great benefits in weight, size, efficiency and control bandwidth …

High-voltage insulation design of coreless, planar PCB transformers for multi-MHz power supplies

OC Spro, F Mauseth, D Peftitsis - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
This article investigates the insulation design for printed, planar, coreless, and high-
frequency transformers with high isolation-voltage. By using finite element analysis on 2-D …

Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs

X Huang, J Palmer, S Ji, L Zhang… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
This paper focuses on the design and testing of a half bridge submodule based on discrete
10 kV/20 A SiC MOSFETs for a modular multilevel converter (MMC). The rated dc bus …

A robust 10 kV SiC MOSFET gate driver with fast overcurrent protection demonstrated in a MMC submodule

X Huang, S Ji, J Palmer, L Zhang, D Li… - 2020 IEEE Applied …, 2020 - ieeexplore.ieee.org
This paper focuses on a robust 10 kV SiC MOSFET gate driver with an improved
desaturation protection scheme for overcurrent protection. The gate driver is designed for 10 …

Cascaded smart gate drivers for modular multilevel converters control: A decentralized voltage balancing algorithm

C Darbas, JC Olivier, N Ginot, F Poitiers, C Batard - Energies, 2021 - mdpi.com
Recent Modular Multilevel Converter (MMC) topology allows for drastic improvements in
power electronic conversion such as higher energy quality, lower power semiconductors …

Testing and validation of 10 kV SiC MOSFET based 35 kVA MMC phase-leg for medium voltage (13.8 kV) grid

J Palmer, S Ji, X Huang, L Zhang… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
This paper focuses on the testing approach and validation of a 10 kV SiC MOSFET based
Modular Multilevel Converter (MMC) phase-leg meant to interface to a 13.8 kV microgrid …

Wireless low-power transfer for galvanically isolated high-voltage applications

M Hitzemann, M Lippmann, J Trachte, A Nitschke… - Electronics, 2022 - mdpi.com
For various applications, such as gate drivers for transistors, wireless chargers for mobile
devices and cars, and isolated measurement equipment, an isolated DC power supply for …