This review discusses how low-energy valence excitations created by swift electrons can
render information on the optical response of structured materials with unmatched spatial …

Metallic nanostructures now play an important role in many applications. In particular, for the
emerging fields of plasmonics and nanophotonics, the ability to engineer metals on …

The most successful example of large lattice-mismatched epitaxial growth of semiconductors
is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and …

On August 22, 1879, in a lecture to the British Association for the Advancement of Science, 1
Sir William Crookes announced that “radiant matter”(his term for the electrons emerging from …

We investigated correlations between nanoscopic optical and structural properties in violet-
emitting, blue-emitting, and green-emitting In x Ga 1− x N/GaN quantum wells (QWs) by …

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …

The spatial and energy resolutions of state-of-the-art transmission electron microscopes
(TEMs) have surpassed 50 pm and 5 meV. However, with respect to the time domain, even …

Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

The microdisplays for augmented reality and virtual reality require ultrasmall micro light-
emitting-diodes (μLEDs) with a dimension of≤ 5 μm. Furthermore, the microdisplays also …

We discuss the impact of kinetics, and in particular the effect of the Ehrlich–Schwöbel barrier
(ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of …