In this paper, the surface of Cu film was treated with formic acid vapor and solution for Cu
low temperature bonding. After formic acid vapor/solution treatment, Cu film surface oxide …

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In0.
52Al0. 48As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The …

The paper deals with a new approach to iterative solving the Schrödinger and Poisson
equations in the first type of semiconductor superlattice. Assumptions of the transfer matrix …

As a proof of principle, operation of traveling-wave resonant-tunneling-diodes (RTDs)
oscillators has been demonstrated experimentally in the frequency range 100-400 GHz. A …

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs)
based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate …

The element diffusion behavior, the interfacial evolution and mechanical properties of the
joining of gallium arsenide (GaAs) with Sn3. 5Ag4Ti (Ce, Ga) alloy filler at 250° C in air were …

An efficient method for simulating quantum transport in quantum cascade lasers is
presented. The calculations are performed within a simple approximation inspired by …

Two methods for calculating transport parameters in semiconductor superlattices by
applying Green's functions are compared in the paper. For one of the methods, the Wannier …

Conditions of fabrication of first-order distributed-feedback surface gratings designed for
single-mode Al 0.45 Ga 0.55 As/GaAs quantum cascades lasers with the emission …

In this paper, we present experimental results of current-induced polarization change and
transverse mode change in mid-infrared quantum cascade lasers. The polarization of laser …