Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for …
This paper presents the technological advancements of the electric vehicles (EVs) all over the world. The first emphasis is on the various types of the EVs along with the energy …
Remaining useful lifetime prediction and extension of Si power devices have been studied extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high- performance power conversion systems and MEMS devices that can operate reliably in …
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power …
T Gong, Y Wu, J Li, W Lin, L Gao, L Shen… - Applied Thermal …, 2022 - Elsevier
In this paper, a framework for the system level optimization of the thin-film thermoelectric cooler (TFTEC) in 3D electronic packaging is developed based on Taguchi-Grey method …
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …
LFS Alves, P Lefranc, PO Jeannin… - 2018 IEEE international …, 2018 - ieeexplore.ieee.org
Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high …
M Cui, Q Bu, Y Cai, R Sun, W Liu, H Wen… - Japanese Journal of …, 2019 - iopscience.iop.org
Power integration is essential for the fully utilization of advanced GaN devices in power conversion applications due to the reduced parasitic inductance, low on-state resistance …