A review of SiC power module packaging technologies: Challenges, advances, and emerging issues

H Lee, V Smet, R Tummala - IEEE Journal of Emerging and …, 2019 - ieeexplore.ieee.org
Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …

Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

A review on energy efficient technologies for electric vehicle applications

RT Yadlapalli, A Kotapati, R Kandipati… - Journal of Energy …, 2022 - Elsevier
This paper presents the technological advancements of the electric vehicles (EVs) all over
the world. The first emphasis is on the various types of the EVs along with the energy …

Overview of real-time lifetime prediction and extension for SiC power converters

Z Ni, X Lyu, OP Yadav, BN Singh… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review

X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

Enhance reliability of semiconductor devices in power converters

MH Nguyen, S Kwak - Electronics, 2020 - mdpi.com
As one of the most vulnerable components to temperature and temperature cycling
conditions in power electronics converter systems in these application fields as wind power …

A system level optimization of on-chip thermoelectric cooling via Taguchi-Grey method

T Gong, Y Wu, J Li, W Lin, L Gao, L Shen… - Applied Thermal …, 2022 - Elsevier
In this paper, a framework for the system level optimization of the thin-film thermoelectric
cooler (TFTEC) in 3D electronic packaging is developed based on Taguchi-Grey method …

Review on driving circuits for wide-bandgap semiconductor switching devices for mid-to high-power applications

CT Ma, ZH Gu - Micromachines, 2021 - mdpi.com
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

Review on SiC-MOSFET devices and associated gate drivers

LFS Alves, P Lefranc, PO Jeannin… - 2018 IEEE international …, 2018 - ieeexplore.ieee.org
Silicon (Si) power devices have dominated the world of Power Electronics in the last years,
and they have proven to be efficient in a wide range of applications. But high power, high …

Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters

M Cui, Q Bu, Y Cai, R Sun, W Liu, H Wen… - Japanese Journal of …, 2019 - iopscience.iop.org
Power integration is essential for the fully utilization of advanced GaN devices in power
conversion applications due to the reduced parasitic inductance, low on-state resistance …